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Tunable semiconductor laser on a semi-isolating substrate

机译:半隔离基板上的可调半导体激光器

摘要

A tunable laser diode on a semi-insulating substrate having a stripe-shaped layer structure has an intermediate layer between an active layer and a tuning layer that is grown-over by an confinement layer that is doped for the same conductivity type as the intermediate layer. An oppositely doped, lateral region is electrically connected via an identically doped lower region to the active layer. An upper region is likewise oppositely doped and is electrically connected to the tuning layer. A contact layer is essentially planarly applied on the surface of the confinement layer and has respective portions on the appertaining regions on which the contacts provided with adequate bond areas are applied with a further contact layer for the common contact.
机译:具有条纹状层结构的半绝缘基板上的可调谐激光二极管在有源层和调谐层之间具有中间层,该中间层由掺杂有与该中间层相同的导电类型的限制层所生长。反向掺杂的侧面区域通过相同掺杂的下部区域电连接到有源层。上部区域同样被相反地掺杂并且电连接到调谐层。接触层基本上平面地施加在限制层的表面上,并在相应区域上具有相应的部分,在该部分上设有足够的粘结区域的接触件上施加了用于公共接触的另一接触层。

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