Single quantum well II-VI laser diode without cladding

摘要

A single quantum well II-VI laser diode without semiconductor cladding layers includes a pn junction formed by overlaying light-guiding layers of p-type and n-type ZnSe on an n-type GaAs substrate. A CdSe/ZnSe short- period strained-layer superlattice single quantum well active layer is positioned between the guiding layers. An Au electrode overlays the p- type guiding layer opposite the single quantum well active layer. The guiding layers have thicknesses which enable the substrate and Au electrode to confine the light beam generated by the device within the active layer and the guiding layers.