Single quantum well II-VI laser diode without cladding layer

摘要

A single quantum well II-VI laser diode without a semiconductor cladding layer includes a PN junction formed by P-type and N-type light guide layers 14 and 16 on an n-type GaAs substrate. The superlattice single quantum well active layer 12 of the CdSe / ZnSe short cycle strain layer is disposed between the induction layers. The Au electrode is disposed on the P-type induction layer opposite the single quantum well active layer. The induction layer has a thickness such that the substrate and the Au electrode can confine the light beam in the active layer and the induction layer.