首页> 外国专利> COMPRESSION-BONDED SEMICONDUCTOR DEVICE

COMPRESSION-BONDED SEMICONDUCTOR DEVICE

机译:压接半导体器件

摘要

PURPOSE: To position and fix a semiconductor substrate and avoid its rotation to provide a compression-bonded semiconductor device whose reliability is improved. ;CONSTITUTION: Protrusions 12a are provided on the outer circumference of a resin ring 12 which protects the edge part of a semiconductor substrate 31. Recesses 13a are provided inside an insulating ring 13 and the protrusions 12a are mated with the recesses 13a to avoid the rotation of the semiconductor substrate 31 relative to the insulating ring 13 and to position and fix the semiconductor substrate 31 to the insulating ring 13. Further, recesses 13b and recesses 4a are provided outside the insulating ring 13 and an insulator cylinder 4 respectively. Support members 14 are fitted to spaces formed by both the recesses 13b and 4a to avoid the rotation of the insulating ring 13. As the insulating ring 13 is positioned to an external electrode, the semiconductor substrate 31 is positioned to the external electrode.;COPYRIGHT: (C)1995,JPO
机译:目的:定位和固定半导体衬底并避免其旋转,以提供可靠性提高的压接半导体器件。 ;构成:在树脂环12的外周上设有突起12a,以保护半导体衬底31的边缘部分。在绝缘环13的内部设有凹槽13a,并且将突起12a与凹槽13a配合以避免旋转。半导体基板31相对于绝缘环13相对于绝缘环13定位并且将半导体基板31定位并固定到绝缘环13。此外,在绝缘环13和绝缘体圆筒4的外侧分别设置有凹部13b和凹部4a。支撑构件14装配到由凹部13b和4a形成的空间中,以避免绝缘环13旋转。由于绝缘环13位于外部电极上,所以半导体基板31位于外部电极上。 :(C)1995,日本特许厅

著录项

  • 公开/公告号JPH07130776A

    专利类型

  • 公开/公告日1995-05-19

    原文格式PDF

  • 申请/专利权人 HITACHI LTD;

    申请/专利号JP19930278426

  • 申请日1993-11-08

  • 分类号H01L21/52;H01L29/74;

  • 国家 JP

  • 入库时间 2022-08-22 04:24:01

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号