This is a plasma cleaning method for removing pre formed residues in the plasma treatment center by dry cleaning the same layer of photographers and barriers on silicon wafers.In this method, the mixture of oxidation gas and chlorine containing gas is put into kemburg, and then plasma cleaning process is carried out.The plasma cleaning process is to activate the net gas mixture and form the plasma cleaning gas, contact the internal surface of Kember with the plasma refined gas, and remove the residue on the internal surface.In addition, the clean gas mixture can also include fluorine-based gas.For example, the above clean gases may include C2, O2 and any CF4.The advantage of this method is that there is no need to open the plasma treatment system.In addition, all residues can be completely removed, and the by-products formed in the bonding process can be prevented from remaining after the end of the bonding process.
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