Synthesis of Diamond Film by DC Chemical Vapor Deposition

摘要

The present invention relates to a high speed, large area synthesis method of a diamond film using a DC power plasma chemical vapor deposition method. The present invention uses a DC power plasma chemical vapor deposition method for high-speed synthesis of diamonds, connects several cathodes to independent DC quasi-spheres for face-to-face compatibility, and then stably generates and maintains a large-Features. In the synthesis of diamond according to the present invention, the synthesis rate can be as high as several tens of microns per hour as in the case of using a single anode, and the synthesis area can be easily increased by increasing the number of cathodes, Can be advantageously used for the synthesis of a high thermal conductive substrate material or for the synthesis of a diamond thick film such as an infrared ray transmission window.