首页> 外国专利> DC discharge plasma chemical vapor deposition diamond synthesis method

DC discharge plasma chemical vapor deposition diamond synthesis method

机译:直流放电等离子体化学气相沉积金刚石合成方法

摘要

The present invention relates to a DC discharge plasma chemical vapor deposition diamond synthesis method. In the method of the present invention, the heat transfer from the cathode to the cathode suspension device is blocked by the thin cathode suspension rod, so that the temperature of the entire cathode is uniformly maintained at 2000C or more, So as to stabilize the formation of the plasma while performing the synthesis of the diamond. The present invention can stabilize the plasma by uniformly maintaining the temperature of the whole cathode above the formation temperature of the solid carbon and can prevent spalling of the surface layer of the negative electrode by carbonization of the negative electrode, There is an effect of increasing the life span.
机译:本发明涉及直流放电等离子体化学气相沉积金刚石的合成方法。在本发明的方法中,从阴极到阴极悬挂装置的热传递被细的阴极悬挂杆阻挡,从而整个阴极的温度均匀地保持在2000℃或更高,从而稳定了形成。进行金刚石合成时的等离子体。本发明可以通过将整个阴极的温度均匀地保持在固体碳的形成温度以上来稳定等离子体,并且可以防止由于负极的碳化而引起的负极表面层的剥落。寿命。

著录项

  • 公开/公告号KR950013982A

    专利类型

  • 公开/公告日1995-06-15

    原文格式PDF

  • 申请/专利权人 김은영;

    申请/专利号KR19930023549

  • 发明设计人 이재갑;백영준;은광용;

    申请日1993-11-06

  • 分类号C01B31/06;

  • 国家 KR

  • 入库时间 2022-08-22 04:11:15

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号