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Apparatus for chemical vapor deposition for diamond film and method for synthesis of diamond film

机译:金刚石膜的化学气相沉积设备和金刚石膜的合成方法

摘要

The invention and suppresses the increase of the substrate temperature as in the synthesis of diamond by a chemical vapor deposition process At the same time the diamond relates to the synthesis gas or ion of a diamond synthesis method using chemical vapor deposition apparatus for diamond synthesis and it can increase the growth rate of the diamond by increasing the degree of activation, chemical vapor deposition for diamond synthesis according to the invention device includes a chamber in which the process is a chemical vapor deposition process, is provided in the chamber, the substrate to provide a growth area of the diamond, and is made including a heat block structure provided in the spaced position above the substrate, the heat block structure characterized by an opening which can be a precursor gas is moving. ;
机译:与通过化学气相沉积法合成金刚石时一样,本发明抑制了基底温度的升高。同时,金刚石涉及使用化学气相沉积设备进行金刚石合成的金刚石合成方法的合成气或离子,可以通过增加活化程度来增加金刚石的生长速率,根据本发明的用于金刚石合成的化学气相沉积装置包括腔室,该过程是化学气相沉积过程,设置在该腔室中,提供衬底该热阻结构的特征在于可以移动的是前驱体气体。 ;

著录项

  • 公开/公告号KR101320620B1

    专利类型

  • 公开/公告日2013-10-23

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20120037503

  • 发明设计人 이욱성;박종극;백영준;

    申请日2012-04-10

  • 分类号C23C16/44;C23C16/448;C30B29/04;

  • 国家 KR

  • 入库时间 2022-08-21 16:24:17

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