Plant for the production of thin films and ion source using plasma atomization.

摘要

A thin film forming apparatus comprising a plasma generating chamber (14) into which is introduced a gas to generate plasma; a first target (16) and a second target (17) which are made of a material to be sputtered and are disposed in the vicinity of both end portions of interior of the plasma generating chamber, respectively, at least one of the first and second targets having the form of a cylinder; at least one power supply (19) for applying a negative potential to the first and second targets (16,17); an electromagnet (20) adapted to establish the magnetic field within the plasma generating chamber and inducing the magnetic flux (21) leaving one of the first and second targets and entering the other; and a specimen chamber (23) which incorporates therein a substrate holder (27) and is communicated to one end of the plasma generating chamber (14) on the side of the cylindrical target (17). High density plasma generated in the plasma generating chamber sputters the targets so that sputtered substances which constituted the targets are deposited over the surface of a substrate, thereby forming a thin film.