首页> 外文会议> >Progress towards a 20 kV, 2 kA plasma source, ion implantation modulator for automotive production of diamond film on aluminum
【24h】

Progress towards a 20 kV, 2 kA plasma source, ion implantation modulator for automotive production of diamond film on aluminum

机译:迈向20 kV,2 kA等离子源,离子注入调制器的进展,用于汽车在铝上生产金刚石薄膜

获取原文

摘要

This paper provides the process requirements and the electrical design topology being developed to facilitate large scale production of amorphous diamond films on aluminum. The patented recipe, that includes other surface modification processes, requires various operational voltages, duty cycles and current load regimes to ensure a high quality film. It is desirable to utilize a common modulator design for this relatively "low voltage" recipe. Processing may include target part cleaning, ion implantation, plasma deposition and vacuum chamber cleaning. Modulator performance will have a direct impact on plant size and system economics. Unfortunately, process requirements are in a regime that is not easily achievable by solid state or very efficiently by vacuum tube devices.
机译:本文提供了工艺要求和正在开发的电气设计拓扑,以促进在铝上大规模生产非晶金刚石膜。获得专利的配方(包括其他表面改性工艺)需要各种工作电压,占空比和电流负载方案,以确保获得高质量的薄膜。对于这种相对“低电压”的配方,希望采用通用的调制器设计。处理可以包括目标部件清洁,离子注入,等离子体沉积和真空室清洁。调制器性能将直接影响工厂规模和系统经济性。不幸的是,工艺要求处于固态难以达到的状态,或者真空管装置很难非常有效地实现。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号