Wet etching equipment and wet etching processing method

摘要

PURPOSE:To eliminate damage of a transistor formed on a substrate by conducting a circular motion a holding base secured with the substrate with the surface of the substrate directed toward the center, and spraying etching solution or gas containing the solution to the substrate. CONSTITUTION:A chamber 30 is connected to a discharge system 33 and a gas introduction system 34, four arms 36 are extended in a cross state from a central shaft 35, susceptors 37 are attached around the arms 36, and rotated at an arbitrary speed. Eight pieces of 6-inch Si substrates 40 are secured to the inner wall of the post of the susceptor 37. The susceptor 37 is slowly accelerated up to 2000rpm, and held constantly. Then, valves 12, 25 are opened from a gas cylinder 10, and N2 gas containing etching solution is introduced to the chamber 30 via a nozzle 26. The jetted N2 gas is cooled to become foggy. The particles of the foggy etching solution are directed toward the surface of the substrate. Then, the valves 12, 25 are closed, and the chamber 30 is evacuated in vacuum by the system 33 simultaneously.