PURPOSE: To reduce a processing time by scanning a thin film in a process with electronic lines through the use of SEM and analyzing a waveform made by the discharge of secondary electrons generated on the surface of a fine pattern. CONSTITUTION: When a foreign matter exists in the bottom area of a thin film, etc., a charge-up phenomenon appearing in general is gradually reduced by SEM measuring technique. Thereby the waveform of the bottom area is raised in spite of reducing the number of primary electrons. Then at the time of making the primary electrons to scan the upper part of a sample, the waveform appearing from the thin film where mutually different matters are adjacent to each other generates the secondary electrons at a part the mutually different matters are adjacent to each other. Consequently a contrast difference appears according to the number of the generated secondary electrons and at the time of comparing this contrast difference by the height of waveforms, the thin film and the presence/absence of the foreign matter is recognized. At the time of making the electronic lines to scan a hole obtained by removing an oxide film layer 7 at the central upper part of a silicon substrate 1, the bottom area starts from the same height as a generation starting area. At the time of making the primary electronics to scan a residual hole at the layer 7 at the upper part of the silicon substrate 1, the bottom area of the measured waveform starts at a height lower than the generation starting area to show that the layer 7 remains. As a silicon wafer can be confirmed as it is without damaging by this, economy, time saving and the precision of a process are improved.
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