BAND GAP REFERENCE GENERATION DEVICE HAVING PROCESSING CIRCUIT AND KICK START CIRCUIT

摘要

PURPOSE: To provide a band gap reference generation device for obtaining reference voltage VR from power voltage VDD. ;CONSTITUTION: The band gap reference generation device 2 has a band gap reference circuit 10 and a voltage adjusting circuit 14 connected to the circuit. The voltage adjusting circuit 14 supplies power to the band gap reference circuit 10 so that voltage of a first internal control node becomes equal to that in a second internal control node. The first internal control node and the second internal control node are formed on different current paths in the band gap reference circuit. Thus, device stress in the band gap reference circuit reduces by making voltage in the internal nodes equal. The band gap reference generation device 12 contains kick start circuit 18 and 20 for the voltage adjusting circuit 14 and the band gap reference circuit 10. Furthermore, an output stage processing for converting reference voltage VR outputted from a low stress operation point into prescribed reference voltage VREF can be contained.;COPYRIGHT: (C)1996,JPO