首页> 外国专利> APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR REDUCING PRESSURE IN PROCESSING CHAMBER METHOD FOR REMOVING REACTION PRODUCT, AND METHOD FOR PREVENTING DEPOSITION OF REACTION PRODUCT

APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR REDUCING PRESSURE IN PROCESSING CHAMBER METHOD FOR REMOVING REACTION PRODUCT, AND METHOD FOR PREVENTING DEPOSITION OF REACTION PRODUCT

机译:制造半导体装置的设备,制造半导体装置的方法,在处理室中减少压力的方法以除去反应产物的方法以及防止反应产物沉积的方法

摘要

PURPOSE: To remove reaction product from a workpiece without heating it by applying sonic waves to the workpiece and giving treatment while applying the sonic waves to the workpiece. ;CONSTITUTION: Chlorine 112 remaining as large amounts of reaction products through treatment is deposited on the surface of a wafer 111. After treatment, the wafer 111 is placed on a support 122 by using a carrier 72 and fixed by a clamp 121. Next, a chamber 3 is released to the atmosphere so that its atmosphere is replaced by the atmosphere and the pressure is returned to the atmospheric pressure. Then, electric signals are oscillated by an oscillator 142 and ultrasonic waves having a frequency of 45kHz are transmitted via the support 122 to the wafer 111. As a result, the chlorine 112 remaining as the reaction product is removed from the wafer 111. This enable the reaction product to be removed from the workpiece without heating the workpiece.;COPYRIGHT: (C)1996,JPO
机译:目的:通过向工件施加声波并在向工件施加声波的同时进行处理,以在不加热工件的情况下从工件上除去反应产物。 ;组成:通过处理残留为大量反应产物的氯112沉积在晶片111的表面上。处理后,利用载体72将晶片111放置在支撑物122上,并用夹具121固定。腔室3被释放到大气中,从而其大气被大气代替,并且压力返回到大气压力。然后,电信号由振荡器142振荡,并且频率为45kHz的超声波经由支撑件122传输至晶片111。结果,作为反应产物残留的氯112从晶片111中去除。不需要加热工件就可以从工件上除去反应产物。;版权所有:(C)1996,日本特许厅

著录项

  • 公开/公告号JPH0878402A

    专利类型

  • 公开/公告日1996-03-22

    原文格式PDF

  • 申请/专利权人 TOSHIBA CORP;

    申请/专利号JP19950166658

  • 申请日1995-06-30

  • 分类号H01L21/3065;B01J19/10;C23F4/00;H01L21/205;H01L21/304;H01L21/31;

  • 国家 JP

  • 入库时间 2022-08-22 03:57:26

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