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Chamber wall heating device to prevent deposition of process by-products of reaction chamber for semiconductor manufacturing process

机译:腔室壁加热装置,以防止反应室的副产物沉积在半导体制造工艺中

摘要

The present invention is to improve the yield of the wafer by effectively reducing the phenomenon that the process by-products are deposited on the chamber wall of the reaction chamber used in the deposition process for manufacturing a semiconductor device through the temperature control of the chamber wall.;To this end, the present invention is a heating member (4) which is respectively embedded in the gas injection ring (2) and the bellows cover (3) forming the chamber inner wall to heat the inner wall of the reaction chamber (1), and the reaction chamber (1) A plurality of temperature detecting means (5) installed on the inner wall of the chamber to detect the temperature of the inner wall, and receiving a detection signal of the temperature detecting means (5) so that the temperature of the inner wall of the reaction chamber (1) maintains a constant temperature 4. A chamber wall heating apparatus for preventing process by-product deposition of a reaction chamber for a semiconductor manufacturing process comprising a temperature control controller 6 for controlling a voltage applied to 4).
机译:本发明通过有效地减少处理副产物沉积在用于制造半导体器件的沉积工艺中的反应室的腔室壁上的现象来改善晶片的产量,该反应室的腔室壁用于通过控制腔室壁的温度来制造半导体器件。为此,本发明是一种加热构件(4),其分别埋入形成室内壁的气体注入环(2)和波纹管盖(3)中,以加热反应室( 1),以及反应室(1),多个温度检测装置(5)安装在反应室的内壁上,以检测内壁的温度,并接收温度检测装置(5)的检测信号使反应室(1)的内壁温度保持恒定的温度4。用于防止半导体反应室的工艺副产物沉积的室壁加热装置制造过程包括温度控制控制器6,用于控制施加到4)的电压。

著录项

  • 公开/公告号KR970078816A

    专利类型

  • 公开/公告日1997-12-12

    原文格式PDF

  • 申请/专利权人 문정환;

    申请/专利号KR19960018688

  • 发明设计人 강덕훈;

    申请日1996-05-30

  • 分类号H05K21/20;

  • 国家 KR

  • 入库时间 2022-08-22 02:45:51

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