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Semiconductor device manufacturing apparatus, method for removing reaction product, and method of suppressing deposition of reaction product
Semiconductor device manufacturing apparatus, method for removing reaction product, and method of suppressing deposition of reaction product
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机译:半导体器件制造装置,反应产物的除去方法以及抑制反应产物的沉积的方法
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摘要
A plasma etching apparatus has a first load-lock chamber, a process chamber connected to the first load-lock chamber through a gate valve, and a second load-lock chamber connected to the process chamber through another gate valve. A first processing section is provided to the process chamber to etch a wafer. A second processing section is provided to the second load-lock chamber to remove a reaction product generated during etching from the wafer. In the second processing section, an ultrasonic wave is applied to the wafer, thereby removing the reaction product from the wafer.
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