METHOD FOR CUTTING SILICON SEMICONDUCTOR WAFER

摘要

PURPOSE: To provide a method for stably cutting and machining a silicon semiconductor wafer, on both front and rear surfaces of which patterns are formed in high yield. ;CONSTITUTION: Patterns are formed on both front and rear surfaces of a silicon semiconductor wafer 1. A reinforcing part 8 is formed at one part of the outer surface of the wafer 1. Only one surface of the front and rear surfaces is held. The wafer 1 is cut into two parts at the central part of the width of the thickness in a wafer-to-wafer pattern with an inner-surface edge cutting device. In this method, plastic sheets 2, which have the diameter that is equal to or larger than the diameter of the silicon semiconductor wafer, are attached to both front and rear surfaces of the silicon semiconductor wafer through a bonding agent layer 3 and fixed. The semiconductor wafer is divided into two parts and cut.;COPYRIGHT: (C)1996,JPO