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Trench field effect transistor with reduced punch-through susceptibility and low rÕdson?

机译:沟道效应晶体管,具有降低的击穿磁化率和低Rddson?

摘要

To reduce susceptibility to punchthrough, the channel region of the P body region of a trench field effect transistor is formed in a layer of lightly doped epitaxial silicon. As a result, the channel region has less counterdoping from the background epitaxial silicon and has a greater net P type dopant concentration. Due to the higher net dopant concentration of the P body region, the depletion regions on either side of the P body region expand less far inward through the P body region at a given voltage, thereby rendering the transistor less susceptible to source-to-drain punchthrough. To maintain a low RDSon, the relatively high conductivity of an accumulation region formed along a sidewall of the trench of the transistor when the transistor is on is used to form a conductive path from the channel region to an underlying relatively highly conductive layer upon which the lightly doped epitaxial layer is formed. This underlying relatively highly conductive layer may, for example, be either substrate or a more highly doped epitaxial silicon layer.
机译:为了降低击穿的敏感性,沟槽场效应晶体管的P体区的沟道区形成在轻掺杂的外延硅层中。结果,沟道区与背景外延硅的反掺杂较少,并且净P型掺杂物浓度较高。由于P体区的较高净掺杂剂浓度,在给定电压下,P体区两侧的耗尽区通过P体区向内扩展的距离较小,从而使晶体管不易受源-漏影响。突破。为了保持低RDSon,当晶体管导通时,沿着晶体管沟槽的侧壁形成的累积区的相对高电导率用于形成从沟道区到下面的相对较高导电层的导电路径,形成轻掺杂外延层。该下面的相对较高导电性的层可以例如是衬底或更高掺杂的外延硅层。

著录项

  • 公开/公告号AU4965096A

    专利类型

  • 公开/公告日1996-08-27

    原文格式PDF

  • 申请/专利权人 SILICONIX INCORPORATED;

    申请/专利号AU19960049650

  • 发明设计人 FWU-IUAN HSHIEH;MIKE F CHANG;

    申请日1996-02-07

  • 分类号H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119;

  • 国家 AU

  • 入库时间 2022-08-22 03:49:41

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