首页> 外国专利> THIN FILM SEMICONDUCTOR PHOTOCATALYST ELEMENT AND REACTION DEVICE USING IT

THIN FILM SEMICONDUCTOR PHOTOCATALYST ELEMENT AND REACTION DEVICE USING IT

机译:薄膜半导体光催化剂元素及其反应装置

摘要

PROBLEM TO BE SOLVED: To provide a thin film semiconductor photocatalyst element which enables rapid decomposition of a harmful material and to provide a reaction device using this element. ;SOLUTION: This thin film semiconductor photocatalyst element accelerates decomposition of charges and oxygen reduction reaction by the effect of a metal catalyst and addition of PTFE particles, so that rapid decomposition of a harmful material can be performed even when the element is used in a single form. Moreover, the photocatalyst element is deposited on a base body and plural sheets of photocatalyst elements thus prepared are arranged parallel to each other at intervals so as to perform a three-dimensional laminating method of irradiating the element surface with light beams at a small incident angle. Thereby, the decomposition rate and treating ability per unit illuminated area can be largely improved.;COPYRIGHT: (C)1997,JPO
机译:解决的问题:提供能够使有害物质迅速分解的薄膜半导体光催化剂元件,并提供使用该元件的反应装置。 ;解决方案:这种薄膜半导体光催化剂元素通过金属催化剂和添加PTFE颗粒的作用来加速电荷的分解和氧还原反应,从而即使单独使用该元素也可以快速分解有害物质。形成。此外,将光催化剂元件沉积在基体上,并且将如此制备的多片光催化剂元件彼此间隔地平行布置,以执行以小入射角的光束照射元件表面的三维层压方法。 。从而可以大大提高单位照明面积的分解率和处理能力。;版权所有:(C)1997,日本特许厅

著录项

  • 公开/公告号JPH09276707A

    专利类型

  • 公开/公告日1997-10-28

    原文格式PDF

  • 申请/专利权人 WATANABE MASAHIRO;UCHIDA HIROYUKI;

    申请/专利号JP19960114096

  • 发明设计人 WATANABE MASAHIRO;UCHIDA HIROYUKI;

    申请日1996-04-11

  • 分类号B01J35/02;B01J19/12;B01J23/40;C08J11/00;

  • 国家 JP

  • 入库时间 2022-08-22 03:35:06

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号