首页> 外国专利> OPTICAL MODULATION ELEMENT, CRYSTALLIZING DEVICE, CRYSTALLIZING METHOD, APPARATUS FOR MANUFACTURING THIN-FILM SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR SUBSTRATE, THIN-FILM SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE

OPTICAL MODULATION ELEMENT, CRYSTALLIZING DEVICE, CRYSTALLIZING METHOD, APPARATUS FOR MANUFACTURING THIN-FILM SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR SUBSTRATE, THIN-FILM SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE

机译:光学调制元件,结晶装置,结晶方法,制造薄膜半导体基板的装置,制造薄膜半导体基板的方法,薄膜半导体装置,薄膜​​导体装置,方法

摘要

PROBLEM TO BE SOLVED: To form a mark structure, which is usable as an alignment mark in subsequent steps, on a semiconductor film in the same exposure step, in a step of obtaining a semiconductor of a crystal phase of large particle size from the semiconductor film.;SOLUTION: This invention relates to an optical modulation element 3 including a light intensity modulation structure SP which forms a light intensity distribution for crystallization by modulating light, and a mark formation structure MK which is provided integrally with or independently of the light intensity modulation structure, and forms a light intensity distribution including a pattern in a prescribed shape by modulating light and also indicates a predetermined position of a crystallization region. Through this optical modulation element, a crystal nucleus is formed at an arbitrary position of the semiconductor film deposited on an insulating substrate to a prescribed thickness to grow crystal in a prescribed direction from the crystal nucleus, and the alignment mark AM can be formed at the arbitrary position of the semiconductor film in the same step.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:在以相同的曝光步骤从半导体中获得大粒径的晶体相的半导体的步骤中,在半导体膜上形成标记结构,该标记结构可在后续步骤中用作对准标记。解决方案:本发明涉及一种光调制元件3,其包括光强度调制结构SP和标记形成结构MK,该光强度调制结构SP形成用于通过调制光进行结晶的光强度分布,该标记形成结构MK与该光强度一体地或独立地设置。调制结构,并且通过调制光来形成包括具有预定形状的图案的光强度分布,并且还指示结晶区域的预定位置。通过该光调制元件,在沉积在绝缘基板上的半导体膜的任意位置处形成晶核至预定厚度,以从晶核沿预定方向生长晶体,并且可以在晶核上形成对准标记AM。在同一步骤中半导体膜的任意位置。;版权所有:(C)2011,JPO&INPIT

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