FOCUSED ION BEAM ETCHING IMPROVED BY 1,2-DIIODOETHANE

摘要

PROBLEM TO BE SOLVED: To solve problems generated in the use of iodine, such as the harmfulness of iodine, the clogging of a feed pipe, the sticking to a valve seat by directing a vapor containing 1,2-diiodoethane molecule to a sample to improve the etching by a focused ion beam(FIB). ;SOLUTION: A sample structure 300 to be etched is arranged in a vacuum chamber. The vapor containing 1,2-diiodoethane (ICH₂CH₂I) molecule 305-315, 325-340 is directed to a region to be etched by an injection needle 320. 1,2- Diiodoethane molecule 305-315, 325-340 is changed by being bombarded with the ion beam 350 to generate free iodine atom or ion. The free iodine atom or ion is combined with metallic molecule 355-365 to lower the surface bond energy and to increase etching speed. 1,2-Diiodoethane is more simple in handling than iodine and is not subject to the dangerous substance deal in transportation.;COPYRIGHT: (C)1998,JPO