METHOD OF FORMING P-TYPE NITRIDE BASED III-V COMPOUND SEMICONDUCTOR LAYER

摘要

PROBLEM TO BE SOLVED: To provide method of forming a P-type nitride based III-V compound semiconductor layer which can bring an electrode into ohmic contact of low resistance with a P-type nitride based III-V compound semiconductor layer, while restraining generation of surface roughness, cracks, and deterioration of crystallinity of the semiconductor layer. ;SOLUTION: After a P-type nitride based III-V compound semiconductor layer, e.g. P-type GaN layer 3 is grown by an organic metal chemical vapor deposition method or the like, group II elements such as Mg and Zn are diffused on the surface of the layer 3 by a vapor diffusion method or a solid diffusion method, and a P⁺ type diffusion layer 4 is formed. The diffusion of group II elements is performed at, e.g. 500-700°C. Thereby an electrode can be brought into ohmic contact of low resistance with the P-type nitride based III-V compound semiconductor layer, while restraining generation of surface roughness, cracks, and deterioration of crystallinity of the semiconductor layer.;COPYRIGHT: (C)1998,JPO