PURPOSE: To obtain a frequency-gain characteristic without ripples by a method wherein a resistance chip for power supply is interposed and inserted in a connection line for second power supply and an inductor by an interconnection layer for power supply and by the connection line for second power supply and a parallel resonance circuit by the capacity of a capacity chip for power supply are damped. ;CONSTITUTION: In the case of a semiconductor integrated circuit device package, chips RL, RR for power supply are interposed and inserted respectively in interconnection layers EL, ER for power supply. Thereby, an inductor by the respective interconnection layers EL, ER and by respective connection lines WL', WR' for power supply and a parallel resonance circuit by respective capacities of chips CL, CR for power supply are clamped. As a result, a semiconductor integrated circuit chips M uses an internal circuit as an amplification circuit, a ripple value in a frequency-gain characteristic can be made sufficiently small even when a signal is extended over a wide range from a low-frequency region up to a high-frequency region.;COPYRIGHT: (C)1994,JPO&Japio
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