patsuke of integrated circuit device - ji manner

摘要

PURPOSE: To provide a 3D multi-chip package, and its manufacturing method, comprising densely laminated array, of a semiconductor chip that is at least partially interconnected by a plurality of metallized trenches. ;CONSTITUTION: A step, wherein there is provided with an integrated circuit chip 50 comprising a mtallized trench 62 of high aspect ratio, extending from the first surface to the second surface is included. An etching stop layer 53 is provided at the nearest position where the metal trench 62 ends against a semiconductor substrate. Then an integrated circuit device is attached to a carrier 70 so that the surface of a supporting substrate is exposed, and the substrate is made into a layer thinner than an integrated circuit device so that at least some of the metallized trenches are exposed. Thus, an electric contact is, through an exposed metal trench, formed at an active layer 54 of an integrated circuit chip.;COPYRIGHT: (C)1993,JPO