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Increasing Stabilized Performance of Amorphous Silicon Based Devices Produced by Highly Hydrogen Diluted Lower Temperature Plasma Deposition

机译:高氢稀释的低温等离子体沉积生产的非晶硅基器件的稳定性能提高

摘要

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.
机译:通过特殊的等离子体沉积工艺可以生产出高质量,稳定的光伏和电子非晶硅器件,可以有效抵抗光引起的退化和电流引起的退化。可以通过特殊的等离子体沉积工艺经济地制造功率高,效率高的单结和多结太阳能电池,它们具有高的开路电压和填充因子,并且具有较宽的带隙。优选的方法包括在高浓度氢气存在下较低的温度,高压,硅烷的辉光放电。

著录项

  • 公开/公告号GB2301939B

    专利类型

  • 公开/公告日1998-10-21

    原文格式PDF

  • 申请/专利权人 * AMOCO/ENRON SOLAR;

    申请/专利号GB19960019784

  • 发明设计人 YAUN-MIN * LI;MURRAY S * BENNETT;

    申请日1995-03-09

  • 分类号H01L31/06;H01L31/0376;H01L31/20;

  • 国家 GB

  • 入库时间 2022-08-22 02:41:33

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