Increasing stabilized performance of amorphous silicon based devices produced by highly hydrogen diluted lower temparature plasma deposition

摘要

A solar cell has a region comprising amorphous Si and has an open circuit voltage of at least 0.9 volts and a fill factor of at least 0.7. The cell has a rapidly light-saturable amorphous Si region to prevent photo-degradation in less than 1500 hours. The cell may be made by a plasma deposition process at less than 250{C and up to 50 Torr, preferably by glow discharge of a silane with or without methane in the presence of a high concentration of hydrogen gas e.g. up to 1000:1. It is preferably a pin device which may have three junctions including layers of Si, SiC and SiGe with a plurality of intrinsic layers.