MANUFACTURE OF SEMICONDUCTOR DEVICE HAVING WIRING CONSTITUTED OF DOPED POLYSILICON FILM

摘要

PROBLEM TO BE SOLVED: To provide a manufacture method of a reliable semiconductor device in which a cut does not exist and which comprises a doped polysilicon film. ;SOLUTION: An interlayer insulating film pattern having a contact hole is formed on a semiconductor substrate 21 and a thick doped polysilicon film 29 buried in the contact hole is formed on the whole face of an interlayer insulating film pattern 27. A polysilicon film 29a from which a carbon atom layer is removed from the surface and which is etched back is formed on the interlayer insulating film pattern 27, by providing uniform thickness by etching the whole face of the doped polysilicon film 29 by using gas containing carbon and gas containing oxygen. A metallic silicide film 31 is formed on the polysilicon film 29a, and the metallic silicide film 31 and the etched back polysilicon film 29a are continuously patterned and the wiring is formed.;COPYRIGHT: (C)1999,JPO