首页> 外国专利> A method for forming an indium oxide film by an electrolytic deposition method or a non-electrolytic deposition method, a substrate for a semiconductor element provided with the indium oxide film,

A method for forming an indium oxide film by an electrolytic deposition method or a non-electrolytic deposition method, a substrate for a semiconductor element provided with the indium oxide film,

机译:通过电解沉积法或非电解沉积法形成氧化铟膜的方法,具有该氧化铟膜的半导体元件用基板,

摘要

A substrate and an opposite electrode are immersed in an aqueous solution containing at least one of nitrate ions and indium ions and an electric current is caused to flow between the substrate and the opposite electrode to form an indium oxide film on the substrate to form an indium oxide film . A substrate and a photovoltaic device for a semiconductor device manufactured using the film forming method.;An aqueous solution for forming an indium oxide film by a non-electrolytic deposition method, which contains at least one nitrate ion, indium ion and tartarate. A method of forming a film for forming an indium oxide film on a substrate by a non-electrolytic deposition method using the aqueous solution. A substrate and a photovoltaic device for a semiconductor device manufactured using the film forming method.
机译:将基板和对电极浸入包含硝酸根离子和铟离子中的至少一种的水溶液中,使电流在基板和对电极之间流动,以在基板上形成氧化铟膜以形成铟。氧化膜。使用成膜方法制造的基板和用于半导体器件的光伏器件;通过非电解沉积法形成氧化铟膜的水溶液,其包含至少一种硝酸根离子,铟离子和酒石酸盐。一种通过使用水溶液的非电解沉积法在基板上形成用于形成氧化铟膜的膜的方法。使用成膜方法制造的基板和用于半导体装置的光伏装置。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号