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A method for forming an indium oxide film by an electrolytic deposition method or a non-electrolytic deposition method, a substrate for a semiconductor element provided with the indium oxide film,
A method for forming an indium oxide film by an electrolytic deposition method or a non-electrolytic deposition method, a substrate for a semiconductor element provided with the indium oxide film,
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机译:通过电解沉积法或非电解沉积法形成氧化铟膜的方法,具有该氧化铟膜的半导体元件用基板,
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摘要
A substrate and an opposite electrode are immersed in an aqueous solution containing at least one of nitrate ions and indium ions and an electric current is caused to flow between the substrate and the opposite electrode to form an indium oxide film on the substrate to form an indium oxide film . A substrate and a photovoltaic device for a semiconductor device manufactured using the film forming method.;An aqueous solution for forming an indium oxide film by a non-electrolytic deposition method, which contains at least one nitrate ion, indium ion and tartarate. A method of forming a film for forming an indium oxide film on a substrate by a non-electrolytic deposition method using the aqueous solution. A substrate and a photovoltaic device for a semiconductor device manufactured using the film forming method.
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