Method of forming inter-metal dielectric layer for WVIA process

摘要

A method of forming an inter-metal dielectric layer using hydrogen silsesquoxane (HSQ) as one of the dielectric layers. HSQ is a highly fluidic material that has a high gap-filling capacity. Therefore, the desired thickness and uniformity can be obtained in a single coating operation. Furthermore, when the HSQ layer is cured in an atmosphere of gaseous nitrogen, the HSQ layer is able to attain a high degree of planarity. Consequently, there is no need to planarize the dielectric layer before carrying out subsequent operations.