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Method of forming a inter-metal dielectric layer in a damascene process
Method of forming a inter-metal dielectric layer in a damascene process
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机译:在镶嵌工艺中形成金属间介电层的方法
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摘要
The invention which is that, due to the high thickness of the prior art metal interlayer insulating film and the degree of integration of devices decrease RC delay in the device operation on the method for forming the damascene (damascene) metal in the process an interlayer insulating film (IMD) of the semiconductor element deepened in order to solve the problems, a silicon oxide film and fluorinated amorphous carbon layer from having a metal interlayer insulating film formed of a laminate structure of (fluorinated amorphous carbon;; aF C), it is possible to have a low dielectric constant without increasing the thickness of the metal interlayer insulating film, fluorinated amorphous by this carbon layer is an etch stop layer serves, more simply, while it at the same time the step screen damascene method for forming a metal interlayer insulation film in the damascene process of a semiconductor device that can improve the integration degree of the device is disclosed.
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