Photoresist constituent null for far-ultraviolet light

摘要

PURPOSE:To obtain the phosoresist compsn. having a high sensitivity and excel lent dry etching resistance by using a compd. which generates an acid when irradiated with far UV light and a high-polymer compd. having a specific consti tutional unit. CONSTITUTION:This photoresist compsn. is constituted of the compd. which generates the acid when irradiated with far UV light and the high-polymer compd. having the constitutional unit expressed by formula I. The compsn. is used for far UV exposing. In the formula I, R1 denotes hydrogen or methyl group; R2 to R6 respectively denote hydrogen, lower alkyl group, aryl group and aralkyl group or R2 and R4 together denote an alkylene group; m denotes 0 or 1; n denotes 1 to 6 integer. Halogens of onium, salts, such as BF4, PF6, AsF6, org. halogen compds., etc., are adequate as the compd. which generates the acid when irradiated with far UV light. Then, the photoresist compsn. for far UV light having the high sensitivity, the wide development latitude at the time of development and the excellent dry etching resistance is obtd.