Gallium nitride-based semiconductor laser manufacturing method and a gallium nitride semiconductor laser using a selective growth method

摘要

PROBLEM TO BE SOLVED: To provide a gallium nitride laser having a small threshold oscillating current and a small resistance by manufacturing the laser by forming a current constricting structure by a selective growth method. ;SOLUTION: After a gallium nitride buffer layer 102 which is grown at a low temperature and an n-type gallium nitride contact layer 102 are formed on a sapphire substrate 101 by the metal organic chemical vapor growth method, a stripe-like silicon oxide film 215 is formed in the (11-20)-direction of the crystal of the contact layer 103 and p-type gallium nitride current blocking layers 114 are selectively formed only in the openings of the silicon oxide film 215 by using the film 215 as a mask. Then, after the film 215 is removed with a hydrochloric acid, a gallium nitride layer, a clad layer, a light guide layer, an active layer having a multiple quantum well structure, a dissociation- preventing layer, a light guide layer, a clad layer, and a contact layer are formed by the metal organic chemical vapor growth method.;COPYRIGHT: (C)1998,JPO