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Laser diode having separate-confinement, highly strained quantum wells
Laser diode having separate-confinement, highly strained quantum wells
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机译:具有单独约束,高应变量子阱的激光二极管
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摘要
A semiconductor laser device with separated, highly-strained quantum wells employs highly-strained ternary and quasi-ternary compounds as material for each quantum well. A first device structure includes a quantum well composition range extended from strained ternary compounds employed in conventional quantum well laser devices. A second device structure, employing a similar structure to that of the first device, employs new quasi-ternary compounds with compositions outside of the miscibility gap of corresponding quaternary compounds for quantum wells in GaSb- or InAs-based laser devices which extend performance of mid-infrared laser devices operating in the 2.2-4.0 mum range. The semiconductor diode laser may be formed so as to operate having a multi-mode or single-mode radiation.
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