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LASER DIODE HAVING SEPARATE-CONFINEMENT, HIGHLY STRAINED QUANTUM WELLS
LASER DIODE HAVING SEPARATE-CONFINEMENT, HIGHLY STRAINED QUANTUM WELLS
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机译:具有单独约束,高应变量子阱的激光二极管
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摘要
A semiconductor laser device and method of forming the device is described. The semiconductor laser device is a separate confinement quantum well diode laser for which highly strained compounds are employed as a material for each quantum well. A first device structure includes a quantum well composition range extended from strained ternary compounds employed in conventional quantum well laser devices. A second device structure, employing a similar structure to that of the first device, employs new quasi-ternary compounds for quantum wells in GaSb- or InAs-based laser devices which extend performance of mid-infrared laser devices operating in the 2.2-4.0 νm range.
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