Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers

摘要

2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy(MBE). The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at77 K. The optimal growth temperature of quantum wells is440°C. The PL peak wavelength of quantum wells at300 K is1.98μm, and the FWHM is115 nm. Tellurium-doped GaSb buffer layers were optimized by Hall measurement. The optimal doping concentration is1.127×1018 cm-3 and the resistivity is5.295×10-3Ωcm.?2011 Chinese Institute of Electronics.