BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a contact in a semiconductor device. In particular, a hemispherical polysilicon grain (hemispherical poly) is formed on a contact portion in order to improve a phenomenon that the contact resistance of the contact plug and the active region increases as the area of the contact portion decreases. The present invention relates to a method of reducing contact resistance of a semiconductor device which reduces contact resistance by forming -Si grains. The present invention provides a method of forming an interlayer dielectric layer on a semiconductor substrate on which an active region is formed, forming a contact hole for exposing an active region by removing a predetermined portion of the interlayer dielectric layer, and forming a surface on an exposed surface of the active region. Forming the nonuniform first conductive layer, forming a second conductive layer covering the surface of the first conductive layer so as to fill the contact holes, and patterning the second conductive layer.
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