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OVERLAY METROLOGY KEY DEVICE OF SEMICONDUCTOR LITHOGRAPHY PROCESS AND METHOD FOR MEASURING THE SAME
OVERLAY METROLOGY KEY DEVICE OF SEMICONDUCTOR LITHOGRAPHY PROCESS AND METHOD FOR MEASURING THE SAME
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机译:半导体光刻技术的叠层计量关键装置及其测量方法
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摘要
PURPOSE: providing a kind of overlay metrology key device, to realize accurate overlay alignment in a lithographic process. CONSTITUTION: a kind of overlay metrology key device is formed in the semiconductor substrate that the second device layer is formed in the semiconductor substrate and a sub- scale (410) of first layer including main scale (400). The sub- scale of the cornet of each is connected on every side of the block-type tread of bridge-type format and forms the second device layer. Therefore, the second element layer of overlay metrology key device measurement Aligning degree is in manufacture semiconductor integrated circuit.
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