首页> 外国专利> OVERLAY METROLOGY KEY DEVICE OF SEMICONDUCTOR LITHOGRAPHY PROCESS AND METHOD FOR MEASURING THE SAME

OVERLAY METROLOGY KEY DEVICE OF SEMICONDUCTOR LITHOGRAPHY PROCESS AND METHOD FOR MEASURING THE SAME

机译:半导体光刻技术的叠层计量关键装置及其测量方法

摘要

PURPOSE: providing a kind of overlay metrology key device, to realize accurate overlay alignment in a lithographic process. CONSTITUTION: a kind of overlay metrology key device is formed in the semiconductor substrate that the second device layer is formed in the semiconductor substrate and a sub- scale (410) of first layer including main scale (400). The sub- scale of the cornet of each is connected on every side of the block-type tread of bridge-type format and forms the second device layer. Therefore, the second element layer of overlay metrology key device measurement Aligning degree is in manufacture semiconductor integrated circuit.
机译:目的:提供一种重叠计量关键设备,以实现光刻过程中准确的重叠对准。构成:一种覆盖计量关键器件形成在半导体衬底中,第二器件层形成在半导体衬底中,并且第一层的子尺度(410)包括主尺度(400)。每个短号的子刻度连接在桥式格式的块状胎面的每一侧,并形成第二装置层。因此,重叠计量关键器件测量的第二元素层的对准度是在制造半导体集成电路中。

著录项

  • 公开/公告号KR20000018993A

    专利类型

  • 公开/公告日2000-04-06

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR19980036877

  • 发明设计人 KIM YOUNG CHANG;

    申请日1998-09-08

  • 分类号H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-22 01:46:02

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