VHF/UHF PLASMA PROCESS FOR USE IN FORMING INTEGRATED CIRCUIT STRUCTURES ON SEMICONDUCTOR WAFERS

摘要

An improved method of fabricating integrated circuit structures on semiconductor wafers is disclosed using a method in which plasma is generated by a VHF / UHF (Ultra High Frequency / Ultra Microwave) power source having a frequency range of about 50 to 800 MHz. The plasma-assisted low pressure etching or deposition method is carried out under a pressure of 500 millitorr binomial, with a ratio of anode area to cathode area of about 2: 1 to 20: 1, and electrode spacing of about 5 cm to about 30 cm. The plasma-assisted high pressure etching or deposition method is carried out under a pressure of 500 milliTorr to 50 Torr or more, with an electrode spacing of about 5 cm or less. By performing plasma-assisted methods operating in the frequency range of about 50 to 800 MHz, the electrode sheathing voltage is low enough to avoid damage to the structure provided on the wafer, while at the same time enabling the method to be initiated without the need for an auxiliary power source. Stay high enough.;Operation in this frequency range also mitigates very small load effects.