Insulated gate bipolar transistor with lateral component for retaining electric field strength

摘要

A lateral, three-dimensional structure (6,7) is formed on the semiconductor body (1). The structure has vertical depressions (6) within which the electric conductivity is lower than in the interspaces (7) between the depressions. Typically the component is of lateral type with a dielectric zone (5) adjacent to a substrate (4). An Independent claim is also included for a method of manufacturing the semiconductor device.