Lateral semiconductor component, e.g. to act as a bipolar component like a photo-intrinsic diode or an insulated gate bipolar transistor, has high electric strength

摘要

A semiconductor body (1) has upper (2) and lower sides. Beneath the upper side there is a drift zone (8) for a first power type divided into several drift areas (4-7) extending in a first lateral direction (LD) (9) and limited on one side by a highly doped, elongated first connection zone (10) that extends vertically in a second LD (11) towards the first LD. An independent claim is also included for a method for producing a semiconductor element.