首页> 外国专利> Semiconductor component e.g. insulated gate bipolar transistor, arrangement, has semiconductor bodies of components of one type attached to common carrier, and semiconductor bodies of components of another type, attached to another carrier

Semiconductor component e.g. insulated gate bipolar transistor, arrangement, has semiconductor bodies of components of one type attached to common carrier, and semiconductor bodies of components of another type, attached to another carrier

机译:半导体元件绝缘栅双极晶体管,该装置具有附接到公共载体的一种类型的组件的半导体本体和附接到另一载体的另一种类型的组件的半导体本体

摘要

The arrangement has two different types of power semiconductor components (1-6) e.g. insulated gate bipolar transistors (IGBT), with control connections (11, 21, 31, 41, 51, 61) and a load clearance between a load clearance connections (12, 13, 22, 23, 32, 33, 42, 43, 52, 53, 62, 63). Semiconductor bodies of the components of one type are attached to a common carrier, and the semiconductor bodies of the components of another type, are attached to another carrier, so that the carriers are electrically isolated from each other.
机译:该装置具有两种不同类型的功率半导体组件(1-6),例如,功率半导体组件。绝缘栅双极晶体管(IGBT),具有控制连接(11、21、31、41、51、61),并且在负载间隙连接之间具有负载间隙(12、13、22、23、32、33、42、43, 52、53、62、63)。一种类型的组件的半导体本体被附接到公共载体,而另一种类型的组件的半导体本体被附接到另一载体,使得这些载体彼此电隔离。

著录项

  • 公开/公告号DE102006038541A1

    专利类型

  • 公开/公告日2008-02-28

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE20061038541

  • 发明设计人 RUFF MARTIN;

    申请日2006-08-17

  • 分类号H01L25/07;

  • 国家 DE

  • 入库时间 2022-08-21 19:49:49

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