Method of Strengthening Safe Operating Area for SOI Lateral Insulated Gate Bipolar Transistor

摘要

A new SOI-LIGBT structure with multiple base depths is proposed and experimentally verified to address the unbalanced influence of the depleted-layer to the perimeter and the inner cells in device layout. The new devices are implemented by re-integrating the existing process steps. Compared with conventional structure with only single base depth, the new devices experimentally posses a 1.3 times stronger short-circuit safe operating area (SCSOA), an 18V higher forward-biased SOA, and a 15V higher off-state breakdown voltage. Adverse impact on current capability is barely observed.