A machining device by means of microwaves and method for the production of an inorganic dielectric film

摘要

PURPOSE: To reduce the film forming rate and to obtain high-quality optical recording medium by forming an inorg. dielectric film by using a plasma treatment device having a microwave introducing means equipped with an endless circular waveguide. ;CONSTITUTION: When a SiN_x film is formed by using a plasma CVD device, a plasma chamber 201 and a film forming chamber 202 are evacuated and N₂ gas as the reactive gas is introduced through a gas introducing means 207 into the chamber 201. SiH₄ gas as the source gas is introduced into the chamber 202, while 2.45 GHz microwaves with 1.5kW power is introduced through a microwave introducing means 206 into an endless circular waveguide 205. By introducing microwaves into the chamber 201 through a slot formed on the inner wall of the waveguide, plasma essentially generated from N₂ gas is produced in the chamber 201. The SiH₄ gas in the chamber 202 is ionized with the plasma energy to form a film of SiN_x on a substrate 100.;COPYRIGHT: (C)1995,JPO