首页>
外国专利>
End-of-range damage suppression for ultra-shallow junction formation
End-of-range damage suppression for ultra-shallow junction formation
展开▼
机译:范围末端损伤抑制,形成超浅结
展开▼
页面导航
摘要
著录项
相似文献
摘要
Lightly doped regions are implanted into an amorphous region in the semiconductor substrate to significantly reduce transient enhanced diffusion upon subsequent activation annealing. A sub-surface non- amorphous region is also formed before activation annealing to substantially eliminate end-of-range defects on crystallization of amorphous region containing the lightly doped implants.
展开▼