METHOD FOR MANUFACTURING ANTENNA PATTERN FOR MEASURING PLASMA DAMAGE TO SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing an antenna pattern for measuring plasma damage to a semiconductor device is provided to test the semiconductor device in every manufacturing steps, by forming the antenna pattern which has a different circumference regarding the same area and a different area regarding the same circumference. CONSTITUTION: While a gate electrode and a device interconnection are formed to measure plasma damage to a semiconductor device, an antenna pattern is formed as the same material as the gate electrode and the device interconnection. The antenna pattern has various area ratios regarding the area of a gate electrode pattern and a device interconnection pattern. Either one of a circumference or area of the antenna pattern is varied.