Combined Low Voltage/High Voltage production method with retrograde doped drain extensions for high voltage transistors achieves simplified production and reduced costs

摘要

The method involves producing doped troughs (2) in a semiconducting substrate (1) and mounting semiconducting components for operation at a first voltage in the troughs. A second group of components for operation at a second, higher voltage with extension regions (3) are integrated into the semiconducting circuit. The first components are mounted in a first group of troughs of a number of troughs produced. The second group of components is arranged near other troughs of the troughs produced at the same time so that the other troughs form the extension regions of the higher voltage components