首页> 外国专利> keimkristall for the manufacture of single crystals, using the keimkristalls and processes for the manufacture of sic single crystals and polycrystalline and monocrystalline sic layers

keimkristall for the manufacture of single crystals, using the keimkristalls and processes for the manufacture of sic single crystals and polycrystalline and monocrystalline sic layers

机译:keimkristall用于制造单晶,使用keimkristall和用于制造sic单晶以及多晶和单晶sic层的工艺

摘要

A seed crystal assembly for producing monocrystals and a method for producing SiC monocrystals or monocrystalline SiC layers include a seed crystal with a surface having a first partial region intended as a crystallization surface for a monocrystal grown out of a gas phase and a second partial region with a coating that is chemically resistant to the seed crystal and to the gas phase and does not melt at the growth temperatures. As a result, thermal degradation of the seed crystal is avoided and the quality of the monocrystals which are produced is increased.
机译:用于生产单晶的籽晶组件和用于生产SiC单晶或单晶SiC层的方法包括:籽晶,其表面具有第一部分区域,该第一部分区域用作气相生长的单晶的结晶表面;第二部分区域具有气相生长的单晶。对籽晶和气相具有化学耐受性且在生长温度下不会熔化的涂层。结果,避免了晶种的热降解,并且提高了所产生的单晶的质量。

著录项

  • 公开/公告号DE59607635D1

    专利类型

  • 公开/公告日2001-10-11

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号DE19965007635T

  • 发明设计人 VOELKL JOHANNES;STEIN RENE;

    申请日1996-06-27

  • 分类号C30B25/18;C30B25/02;

  • 国家 DE

  • 入库时间 2022-08-22 01:08:52

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