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Methods of fabricating semiconductor-on-insulator devices including alternating thin and thick film semiconductor regions on an insulating layer
Methods of fabricating semiconductor-on-insulator devices including alternating thin and thick film semiconductor regions on an insulating layer
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机译:绝缘体上半导体器件的制造方法,该绝缘体上半导体器件包括在绝缘层上交替的薄膜和厚膜半导体区域
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摘要
A semiconductor-on-insulator (SOI) device is fabricated by forming spaced apart trenches in a first face of a semiconductor substrate. An insulating layer is formed on the first face of the semiconductor substrate, including on the trenches. A second substrate is bonded to the insulating layer, opposite the semiconductor substrate. The semiconductor substrate is thinned at a second face thereof which is opposite the first face, until a semiconductor film remains on the insulating layer, having alternating thin and thick film semiconductor regions on the insulating layer. Source/drains are formed in the thin film semiconductor regions. Insulated gates are formed on the thick film semiconductor regions, such that a respective insulated gate is located between adjacent source/drains. SOI devices which can suppress floating body effects and yet provide dense integration may thereby be formed.
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