首页> 外国专利> HEAT-RESISTANCE LOW DIELECTRIC CONSTANT THIN FILM, FORMATION METHOD THEREFOR, SEMICONDUCTOR INTERLAYER INSULATING FILM MADE OF THE HEAT-RESISTANCE LOW DIELECTRIC CONSTANT THIN FILM, AND SEMICONDUCTOR DEVICE USING THE SEMICONDUCTOR INTERLAYER INSULATING FILM

HEAT-RESISTANCE LOW DIELECTRIC CONSTANT THIN FILM, FORMATION METHOD THEREFOR, SEMICONDUCTOR INTERLAYER INSULATING FILM MADE OF THE HEAT-RESISTANCE LOW DIELECTRIC CONSTANT THIN FILM, AND SEMICONDUCTOR DEVICE USING THE SEMICONDUCTOR INTERLAYER INSULATING FILM

机译:耐热低介电常数薄膜,其形成方法,由耐热低介电常数薄膜制成的半导体层间绝缘膜以及使用该半导体层间绝缘膜的半导体装置

摘要

PROBLEM TO BE SOLVED: To provide a thin film that has improved heat resistance, has low dielectric constant, and can be applied to a semiconductor element, electrical circuit components, or the like. SOLUTION: This heat-resistance low dielectric constant thin film is composed of molecules, whose element symbols are B, N, and H, has a composition which satisfies 0.7 number of N atoms 1.3 and 1.0 number of H atoms 2.2 for one atom of B, and has a dielectric constant of 2.4 or less.
机译:解决的问题:提供一种具有改善的耐热性,具有低介电常数并且可以应用于半导体元件,电路部件等的薄膜。解决方案:该耐热性低介电常数薄膜由分子组成,其分子符号为B,N和H,其组成满足0.7

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