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Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices
Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices
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机译:III-V族氮化物半导体膜和光电器件中的应变工程和杂质控制方法
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摘要
In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1) doped with Mg, Zn, Cd can be used for this layer. Alternatively, when using AlxInyGa1−x−yN (x0), the layer may be undoped. The interfacial layer is deposited directly on top of the buffer layer prior to the growth of the n-type (GaN:Si) layer and the remainder of the device structure. The thickness of the interface layer varies from 0.01-10.0 &mgr;m.
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机译:在本发明中,界面层被添加到发光二极管或激光二极管结构中以执行应变工程和杂质吸收的作用。一层GaN或Al x Sub> In y Sub> Ga 1&min; x− y Sub> N(0lE; x≦ 1、0lE; y≦ 1)掺有Mg,Zn,Cd的掺杂层可用于此层。或者,当使用Al x Sub> In y Sub> Ga 1&min; x− y Sub> N(x> 0)时,该层可以不掺杂。在生长n型(GaN:Si)层和其余器件结构之前,将界面层直接沉积在缓冲层的顶部。界面层的厚度为0.01-10.0μm。
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